PART |
Description |
Maker |
AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
TPC8203 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TPC8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TPC8402 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII) TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII) TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII) TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (MOSVI/U−MOSII)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
2SK3759 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS? TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSサ)
|
Toshiba Semiconductor
|
2SJ200-Y |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM6J401TU |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
|
Toshiba Semiconductor
|
SSM6N04FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
SSM3J130TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|